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QIS1760002 Datasheet Preview

QIS1760002 Datasheet

Single IGBT Module

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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
QIS1760002 Preliminary
Single IGBT Module
600 Amperes/1700 Volts
Note: All electrical characteristics scaled from 300A module CM300DX-34SA.
X (2 TYP.)
A
C
M
DE
S
W (4 TYP.)
H
V
P
TB
U
(2 TYP.)
QL
GN
J
R
Y
J
F
K
E
E
G
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A 4.33
110.0
B 3.15
80.0
C 3.66±0.008 93.0±0.25
D 2.44±0.008 62.0±0.25
E 1.57
40.0
F 1.42 Max. 36.0 Max.
G 1.14
29.0
H 1.00 Max. 25.5 Max.
J 0.89
22.5
K 0.93
23.5
L 0.83
21.0
M 0.63
16.0
C
Dimensions
N
P
Q
R
S
T
U
V
W
X
Y
Inches
0.69
0.79
0.51
0.43
0.43
0.35
M8 Metric
0.16
0.256 Dia.
M4 Metric
0.24
Millimeters
17.5
20.0
13.0
11.0
11.0
9.0
M8
4.0
6.5 Dia.
M4
6.0
Description:
Powerex IGBT Modules are
designed for use in switching
applications. Each module
consists of one IGBT Transistor
in a single configuration with a
reverse-connected super-fast
recovery free-wheel diode. All
components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ UPS
£ Welding Power Supplies
£ Laser Power Supplies
11/14 Rev. 2
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
1




Powerex

QIS1760002 Datasheet Preview

QIS1760002 Datasheet

Single IGBT Module

No Preview Available !

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QIS1760002
Single IGBT Module
600 Amperes/1700 Volts
Preliminary
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics
Symbol Rating Units
Collector-Emitter Voltage (VGE = 0V)
VCES 1700 Volts
Gate-Emitter Voltage (VCE = 0V)
VGES ±20 Volts
Collector Current (DC, TC = TBD°C)*2,*4 IC 600 Amperes
Collector Current (Pulse, Repetitive)*3 ICRM 1200 Amperes
Total Power Dissipation (TC = 25°C)*2,*4 Ptot 4660 Watts
Emitter Current (TC = TBD°C)*2,*4
IE*1 600 Amperes
Emitter Current (Pulse, Repetitive)*3
IERM*1 1200 Amperes
Maximum Junction Temperature
Tj(max) 175 °C
Maximum Case Temperature*2 TC(max) 125 °C
Operating Junction Temperature
Tj(op)
-40 to +150
°C
Storage Temperature
Tstg
-40 to +125
°C
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute)
VISO 3500 Volts
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed Tj(max) rating.
*4 Junction temperature (Tj) should not increase beyond maximum junction
temperature (Tj(max)) rating.
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
2 11/14 Rev. 2


Part Number QIS1760002
Description Single IGBT Module
Maker Powerex
Total Page 8 Pages
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