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CM150DU-12F - IGBT Module

General Description

Powerex IGBTMOD™ Modules are designed for use in switching applications.

Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode.

Key Features

  • Low Drive Power.
  • Low VCE(sat).
  • Discrete Super-Fast Recovery Free-Wheel Diode.
  • Isolated Baseplate for Easy Heat Sinking.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CM150DU-12F Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD™ 150 Amperes/600 Volts N P - NUTS (3 PLACES) TC MEASURING POINT A D Q (2 PLACES) E E2G2 CM C2E1 E2 C1 F G B H G1E1 F M K K J R C L G2 E2 RTC Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.