PSKT224
Key Features
- PSKT 3 1 5 42 PSKH ∫i2dt TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 (di/dt)cr TVJ = TVJM repetitive, IT = 750 A f = 50 Hz, tP = 200 µs VD = 2/3 VDRM IG = 1A non repetitive, IT = ITAVM diG/dt = 1 A/µs TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tP = 30 µs tP = 500 µs * * *
- (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight International standard package Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688 Keyed gate/cathode twin pins
