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Powersem GmbH

PSHI06 Datasheet Preview

PSHI06 Datasheet

IGBT Module H-Bridge Configuration

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IGBT Module
PSHI 25/06*
H-Bridge Configuration
Short Circuit SOA Capability
Square RBSOA
F10
Preliminary Data Sheet
A1 K10
K13
H13
ECO-PACTM 2
IC25 = 24.5 A
VCES = 600 V
V =CE(sat)typ. 2.4 V
IGBTs
Symbol
VCES
VGES
IC25
IC80
ICM
VCEK
tSC
(SCSOA)
Ptot
Conditions
S18
N9 P18
NTC
Maximum Ratings
TVJ = 25°C to 150°C
600
± 20
V
V
TC = 25°C
TC = 80°C
VGE = ±15 V; RG = 68 ; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
VCE = VCES; VGE = ±15 V; RG = 68 ; TVJ = 125°C
non-repetitive
24.5
17
30
VCES
10
A
A
A
µs
TC = 25°C
82 W
Symbol Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat)
VGE(th)
ICES
IGES
td(on)
tr
td(off)
tf
Eon
Eoff
Cies
RthJC
RthJH
IC = 25 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
IC = 0.4 mA; VGE = VCE
VCE = VCES;
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 15 A
VGE = 15/0 V; RG = 68
VCE = 25 V; VGE = 0 V; f = 1 MHz
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
2.4 2.9 V
2.9 V
4.5 6.5 V
0.6 mA
2.7 mA
100 nA
30 ns
45 ns
270 ns
40 ns
0.7 mJ
0.5 mJ
8 nF
1.52 K/W
3 K/W
Caution: These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
PSHI 25/06*
*NTC optional
Features
NPT IGBT technology
low saturation voltage
low switching losses
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
package with copper base plate
Isolation voltage 3000 V
UL registered, E 148688
Advantages
space and weight savings
reduced protection circuits
package designed for wave
soldering
High power density
Easy to mount with two screws
Typical Applications
motor control
- DC motor armature winding
- DC motor excitation winding
- synchronous motor excitation winding
supply of transformer primary winding
- power supplies
- welding
- X-ray
- UPS
- battery charger
POWERSEM GmbH, Walpersdorfer Str. 53
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20




Powersem GmbH

PSHI06 Datasheet Preview

PSHI06 Datasheet

IGBT Module H-Bridge Configuration

No Preview Available !

PSHI 25/06
Reverse diodes (FRED)
Symbol Conditions
IF25 TC = 25°C
IF80 TC = 80°C
Maximum Ratings
18.5
12.0
A
A
Symbol
VF
IRM
trr
RthJC
RthJH
Conditions
IF = 15 A; TVJ = 25°C
TVJ = 125°C
IF = 10 A; diF/dt = 400 A/µs; TVJ = 125°C
VR = 300 V; VGE = 0 V
with heatsink compound (0.42 K/m.K; 50 µm)
Characteristic Values
min. typ. max.
2.58 2.64
1.8
V
V
7A
70 ns
3.5 K/W
7 K/W
Temperature Sensor NTC
Symbol Conditions
R25
B25/50
T = 25°C
Characteristic Values
min. typ. max.
455 470
3375
485 k
K
Module
Symbol
TVJ
Tstg
VISOL
Md
a
Conditions
IISOL 1 mA; 50/60 Hz
Mounting torque (M4)
Max. allowable acceleration
Maximum Ratings
-40...+150
-40...+150
3000
1.5 - 2.0
14 - 18
50
°C
°C
V~
Nm
lb.in.
m/s2
Symbol
dS
dA
Weight
Conditions
Creepage distance on surface (Pin to heatsink)
Strike distance in air (Pin to heatsink)
Characteristic Values
min. typ. max.
11.2 m m
11.2 m m
24 g
Package style and outline
Dimensions in mm (1mm = 0.0394“)
POWERSEM GmbH, Walpersdorfer Str. 53
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20


Part Number PSHI06
Description IGBT Module H-Bridge Configuration
Maker Powersem GmbH
Total Page 4 Pages
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