PESDNC2FD4V2B Overview
Description
The PESDNC2FD4V2B protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable.
Key Features
- 250W peak pulse power per line (tP = 8/20μs)
- DFN1006-2L package
- Replacement for MLV(0402)
- Bidirectional configurations
- Response time is typically < 1ns
