PTVSHC1DF12VB Datasheet | Prisemi

Description The PTVSHC1DF12VB ESD protector is designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook puters, and PDA’s. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time, lower operating voltage, lower clamping voltage and no device degradation when pared to MLVs. The PTVSHC1DF12VB protects sensitive semiconductor ponents from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. The PTVSHC1DF12VB is available in a SOD-123FL package with working voltages of 12 volt. It is used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15k V air, ±8k V contact discharge) Feature Applications - 3200W Peak pulse power per line (t P = 8/20μs) - - SOD-123FL package - - Response time is typically < 1 ns - - Protect one I/O or power line - - Low clamping Voltage - - Ro HS pliant - - Transient protection for data lines to IEC 61000-4-2(ESD) - ±30KV(air), ±30KV(contact); IEC 61000-4-4 (EFT) 80A (5/50ns)- Cell phone handsets and accessories Personal digital assistants (PDA’s) Notebooks, desktops, and servers Portable instrumentation Cordless phones Digital cameras Peripherals MP3 players Mechanical Characteristics - Lead finish:100% matte Sn(Tin) - Mounting position: Any - Qualified max reflow temperature:260℃ - Device meets MSL 2 requirements - Pure tin plating: 7 ~ 17 um - Pin flatness:≤3mil Rev.06.4 1 .prisemi. ESD Protector Electronics Parameter Symbol VRWM IR VBR IT IPP VC PPP CJ Parameter Peak Reverse Working Voltage Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Peak Pulse Power Junction Capacitance VC VBRVRWM IT IR IR IT VRWM VBR VC Electrical characteristics per line@25℃( unless otherwise specified) Parame...