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V58C2256804SC Datasheet 256 Mbit DDR SDRAM

Manufacturer: ProMOS Technologies

Overview: www.DataSheet.co.kr V58C2256(804/404/164)SC*I 256 Mbit DDR SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 5B DDR400 Clock Cycle Time (tCK2) Clock Cycle Time (tCK2.5) Clock Cycle Time (tCK3) System Frequency (fCK max) 7.5 ns 5ns 5ns 200 MHz 5 DDR400 7.5 ns 6ns 5ns 200 MHz 6 DDR333 7.5 ns 6 ns 6 ns 166 MHz 7 DDR266 7.

Download the V58C2256804SC datasheet PDF. This datasheet also includes the V58C2256164SC variant, as both parts are published together in a single manufacturer document.

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Datasheet Details

Part number V58C2256804SC
Manufacturer ProMOS Technologies
File Size 1.02 MB
Description 256 Mbit DDR SDRAM
Download V58C2256804SC Download (PDF)

General Description

The V58C2256(804/404/164)SC*I is a four bank DDR DRAM organized as 4 banks x 8Mbit x 8 (804), 4 banks x 4Mbit x 16 (164), or 4 banks x 16Mbit x 4 (404).

The V58C2256(804/404/164)SC*I achieves high speed data transfer rates by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock.

All of the control, address, circuits are synchronized with the positive edge of an externally supplied clock.

Key Features

  • High speed data transfer rates with system frequency up to 200 MHz.
  • Data Mask for Write Control.
  • Four Banks controlled by BA0 & BA1.
  • Programmable CAS Latency: 2, 2.5, 3.
  • Programmable Wrap Sequence: Sequential or Interleave.
  • Programmable Burst Length: 2, 4, 8 for Sequential Type 2, 4, 8 for Interleave Type.
  • Automatic and Controlled Precharge Command.
  • Power Down Mode.
  • Auto Refresh and Self Refresh.
  • Refresh Interval: 8192 cycles/64 ms.
  • Availab.

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