V58C2512164SBI5 - High Performance 512M-Bit DDR SDRAM

ProMOS Technologies

Datasheet Details

Part number	V58C2512164SBI5
Manufacturer	ProMOS Technologies
File Size	0.99 MB
Description	High Performance 512M-Bit DDR SDRAM
Datasheet	V58C2512164SBI5_ProMOSTechnologies.pdf

The V58C2512(804/404/164)SB is a four bank DDR DRAM organized as 4 banks x 16Mbit x 8 (804), 4 banks x 32Mbit x 4 (404), 4 banks x 8Mbit x 16 (164).

High speed data transfer rates with system frequency up to 200MHz.
Data Mask for Write Control.
Four Banks controlled by BA0 & BA1.
Programmable CAS Latency: 2.5, 3.
Programmable Wrap Sequence: Sequential or Interleave.
Programmable Burst Length: 2, 4, 8 for Sequential Type 2, 4, 8 for Interleave Type.
Automatic and Controlled Precharge Command.
Power Down Mode.
Auto Refresh and Self Refresh.
Refresh Interval: 8192 cycles/64 ms.
Available i.

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Published: Oct 19, 2007 |