QL63D4S-B Datasheet | QSI

OVERVIEW QL63D4S-A/B/C is a MOCVD grown 635nm band In Ga Al P laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 5m W for optoelectronic devices such as Optical Leveler and Modules. - APPLICATION - Laser Pointer - Bar Code Reader - Laser Module - FEATURES - Visible Light Output : λp = 635 nm - Optical Power Output : 5m W CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode - ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3) Fig. 1 QL63D4SA Fig. 2 QL63D4SB Fig. 3 QL63D4SC - ABSOLUTE MAXIMUM RATING at Tc=25°C Items Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Storage Temperature Symbols P V V Topr Tstg Values 6 2 - 10 ~ +40 - 40 ~ +85 Unit m W V V °C °C - ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C Items Optical Output Power Threshold Current Operating Current Operating Voltage Lasing Wavelength Beam Divergence Beam Angle Monitor Current Optical Distance Symbols Po Ith Iop Vop λp θ  θ⊥ ∆θ  ∆θ ⊥ Im ∆X, ∆Y,...