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QL65I7S-A-H - LASER DIODE

Features

  • - Visible Light Output : λp = 658 nm(Typ. ) - Optical Power Output : 35mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode.

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Datasheet Details

Part number QL65I7S-A-H
Manufacturer QSI
File Size 167.09 KB
Description LASER DIODE
Datasheet download datasheet QL65I7S-A-H Datasheet

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Full PDF Text Transcription

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QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65I7S-A/B/C-H Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65I7S-A/B/C-H InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd. Ver. 2 Mar.2012 ♦OVERVIEW QL65I7S-A/B/C-H is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 35Mw for optoelectronic devices such as DVD-RAM and Industrial Sensor. ♦APPLICATION - Industrial Sensor - DVD-RAM ♦FEATURES - Visible Light Output : λp = 658 nm(Typ.) - Optical Power Output : 35mW CW - Package Type : TO-18 (5.
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