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QSI

QL65I7S-A-S Datasheet Preview

QL65I7S-A-S Datasheet

LASER DIODE

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QSI LASER DIODE
SPECIFICATIONS FOR APPROVAL
Customer :
Model : QL65I7S-A/B/C-S
Signature of Approval
Approved by
Checked by
Issued by
Approval by Customer
315-9, Cheonheung-ri, Sungger-eup,
Cheonan-city, Chungnam, Korea 330-836
WWW.QSILaser.com




QSI

QL65I7S-A-S Datasheet Preview

QL65I7S-A-S Datasheet

LASER DIODE

No Preview Available !

QL65I7S-A/B/C-S
InGaAlP Laser Diode
Quantum Semiconductor International Co., Ltd.
Ver. 1 May. 2008
OVERVIEW
QL65I7S-A/B/C-S is a MOCVD grown 650nm band InGaAlP laser diode with quantum well
structure.
It's an attractive light source, with a typical light output power of 35mW for optoelectronic devices
such as DVD-RAM and Inderstrial Sensor.
APPLICATION
- Inderstrial Sensor
- DVD-RAM
FEATURES
- Visible Light Output : λp = 658 nm(typ.)
- Optical Power Output : 35mW CW
- Package Type
: TO-18 (5.6mmφ)
- Built-in Photo Diode for Monitoring Laser Diode
ELECTRICAL CONNECTION
Bottom View
Pin Configuration
A LD cathode, PD anode (Fig. 1)
B LD , PD anode (Fig. 2)
C LD anode, PD cathode (Fig. 3)
Fig. 1
QL65I7SA-S
Fig. 2
QL65I7SB-S
Fig. 3
QL65I7SC-S


Part Number QL65I7S-A-S
Description LASER DIODE
Maker QSI
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QL65I7S-A-S Datasheet PDF






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