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QL65I7S-A-S - LASER DIODE

Features

  • - Visible Light Output : λp = 658 nm(typ. ) - Optical Power Output : 35mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode.

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Datasheet Details

Part number QL65I7S-A-S
Manufacturer QSI
File Size 84.06 KB
Description LASER DIODE
Datasheet download datasheet QL65I7S-A-S Datasheet

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Other Datasheets by QSI

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65I7S-A/B/C-S Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65I7S-A/B/C-S InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd. Ver. 1 May. 2008 ♦OVERVIEW QL65I7S-A/B/C-S is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 35mW for optoelectronic devices such as DVD-RAM and Inderstrial Sensor. ♦APPLICATION - Inderstrial Sensor - DVD-RAM ♦FEATURES - Visible Light Output : λp = 658 nm(typ.) - Optical Power Output : 35mW CW - Package Type : TO-18 (5.
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