Datasheet Summary
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer : Model : QL65I7S-A/B/C-S
Signature of Approval
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Approval by Customer
315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
.QSILaser.
QL65I7S-A/B/C-S
InGaAlP Laser Diode
Quantum Semiconductor International Co., Ltd.
Ver. 1 May. 2008
- OVERVIEW
QL65I7S-A/B/C-S is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 35mW for optoelectronic devices such as DVD-RAM and Inderstrial Sensor.
- APPLICATION
- Inderstrial Sensor
- DVD-RAM
- Features
- Visible Light Output : λp = 658 nm(typ.)
-...
