QL65I7S-C-H Datasheet Text
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer : Model : QL65I7S-A/B/C-H
Signature of Approval
Approved by Checked by Issued by
Approval by Customer
315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
.QSILaser.
QL65I7S-A/B/C-H
InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd.
Ver. 2 Mar.2012
- OVERVIEW
QL65I7S-A/B/C-H is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 35Mw for optoelectronic devices such as DVD-RAM and Industrial Sensor.
- APPLICATION
- Industrial Sensor
- DVD-RAM
- Features
- Visible Light Output : λp = 658 nm(Typ.)
- Optical Power Output : 35mW CW
- Package Type
: TO-18 (5.6mmφ)
- Built-in Photo Diode for Monitoring Laser Diode
- ELECTRICAL CONNECTION
Bottom View
Pin Configuration
A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3)
Fig. 1 QL65I7SA-H
Fig. 2 QL65I7SB-H
Fig. 3 QL65I7SC-H
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