Click to expand full text
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer : Model : QL65I7S-A/B/C-S
Signature of Approval
Approved by Checked by Issued by
Approval by Customer
315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
WWW.QSILaser.com
QL65I7S-A/B/C-S
InGaAlP Laser Diode
Quantum Semiconductor International Co., Ltd.
Ver. 1 May. 2008
♦OVERVIEW
QL65I7S-A/B/C-S is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 35mW for optoelectronic devices such as DVD-RAM and Inderstrial Sensor.
♦APPLICATION
- Inderstrial Sensor - DVD-RAM
♦FEATURES
- Visible Light Output : λp = 658 nm(typ.)
- Optical Power Output : 35mW CW
- Package Type
: TO-18 (5.