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QL65J7S-A - LASER DIODE

Features

  • - Visible Light Output : λp = 660 nm(typ. ) - Optical Power Output : 50mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode.

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Datasheet Details

Part number QL65J7S-A
Manufacturer QSI
File Size 77.01 KB
Description LASER DIODE
Datasheet download datasheet QL65J7S-A Datasheet
Additional preview pages of the QL65J7S-A datasheet.

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Full PDF Text Transcription

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QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65J7S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65J7S-A/B/C InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd. Ver 0 JAN. 2007 ♦OVERVIEW QL65J7S-A/B/C is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 50mW for optoelectronic devices such as DVD R/RW ♦APPLICATION - DVD R/RW - Optical Module ♦FEATURES - Visible Light Output : λp = 660 nm(typ.) - Optical Power Output : 50mW CW - Package Type : TO-18 (5.
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