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QL67F6S-A - LASER DIODE

Features

  • - Visible Light Output : λp = 670 nm - Optical Power Output : 10mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode.

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Datasheet Details

Part number QL67F6S-A
Manufacturer QSI
File Size 162.28 KB
Description LASER DIODE
Datasheet download datasheet QL67F6S-A Datasheet
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QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer :. Model : QL67F6S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL67F6S-A/B/C InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd. Ver 1. July. 2008 ♦OVERVIEW QL67F6S-A/B/C is a MOCVD grown 670nm band Gain-Guided type InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 10mW for optoelectronic devices such as Bar Code Reader. ♦APPLICATION - Optical Leveler - Laser Module - Bar Code Reader ♦FEATURES - Visible Light Output : λp = 670 nm - Optical Power Output : 10mW CW - Package Type : TO-18 (5.
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