• Part: QL67F6S-B
  • Description: LASER DIODE
  • Category: Diode
  • Manufacturer: QSI
  • Size: 162.28 KB
Download QL67F6S-B Datasheet PDF
QSI
QL67F6S-B
OVERVIEW QL67F6S-A/B/C is a MOCVD grown 670nm band Gain-Guided type In Ga Al P laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 10m W for optoelectronic devices such as Bar Code Reader. - APPLICATION - Optical Leveler - Laser Module - Bar Code Reader - FEATURES - Visible Light Output : λp = 670 nm - Optical Power Output : 10m W CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode - ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3) Fig. 1 QL67F6SA Fig. 2 QL67F6SB Fig. 3 QL67F6SC - ABSOLUTE MAXIMUM RATING at Tc=25°C Items Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Storage Temperature Symbols P V V Topr Tstg Values 12 2 - 10 ~ +60 - 40 ~ +85 Unit m W V V °C °C - ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C Items Optical Output...