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QL78I6S-A-L - LASER DIODE

Features

  • - Visible Light Output : λp = 785 nm - Optical Power Output : 25mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode.

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Datasheet Details

Part number QL78I6S-A-L
Manufacturer QSI
File Size 140.12 KB
Description LASER DIODE
Datasheet download datasheet QL78I6S-A-L Datasheet

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Full PDF Text Transcription

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QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL78I6S-A/B/C-L Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL78I6S-A/B/C-L AlGaAs Laser Diode Quantum Semiconductor International Co., Ltd. 2008-07-15 ♦OVERVIEW QL78I6S-A/B/C-L is a MOCVD grown 780nm band AlGaAs laser diode with quantum well structure. It’s an attractive light source, with a typical light output power of 25mW for industrial optical module and sensor application ♦APPLICATION - Laser scanner unit - Industrial optical module ♦FEATURES - Visible Light Output : λp = 785 nm - Optical Power Output : 25mW CW - Package Type : TO-18 (5.
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