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QL85I6S-C - LASER DIODE

This page provides the datasheet information for the QL85I6S-C, a member of the QL85I6S-A LASER DIODE family.

Features

  • - Visible Light Output : λp = 850 nm - Optical Power Output : 30mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode.

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Datasheet preview – QL85I6S-C

Datasheet Details

Part number QL85I6S-C
Manufacturer QSI
File Size 146.87 KB
Description LASER DIODE
Datasheet download datasheet QL85I6S-C Datasheet
Additional preview pages of the QL85I6S-C datasheet.

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Full PDF Text Transcription

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QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL85I6S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL85I6S-A/B/C AlGaAs Laser Diode Quantum Semiconductor International Co., Ltd. Ver.1 Jan.2005 ♦OVERVIEW QL85I6SA is a MOCVD grown 850nm band AlGaAs laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 30mW for industrial optical module and sensor applications. ♦APPLICATION - Sensor - Industrial Optical Module ♦FEATURES - Visible Light Output : λp = 850 nm - Optical Power Output : 30mW CW - Package Type : TO-18 (5.
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