Click to expand full text
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer : Model : QL90F7S-A/B/C
Signature of Approval
Approved by Checked by Issued by
Approval by Customer
315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
WWW.QSILaser.com
QL90F7S-A/B/C
InGaAs Laser Diode
Quantum Semiconductor International Co., Ltd.
Jun.2004. Ver. 0
♦OVERVIEW
QL90F7S-A/B/C is a MOCVD grown 905nm band InGaAs laser diode with quantum well structure. It’s an attractive light source, with a typical light output power of 10mW for Laser, industrial optical module and sensor application
♦APPLICATION
- Sensor
♦FEATURES
- Visible Light Output : λp = 905 nm
- Optical Power Output : 10mW CW
- Package Type
: TO-18 (5.