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QY-S1010NP - Si Photodiode

Features

  • High sensitivity High cost performance.

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Datasheet Details

Part number QY-S1010NP
Manufacturer QYTECH
File Size 216.59 KB
Description Si Photodiode
Datasheet download datasheet QY-S1010NP Datasheet

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    Si Photodiode For Visible to Near IR range QY-S1010NP Features High sensitivity High cost performance Applications Optical equipments Analytical instruments Measurements equipments Maximum ratings (Typ. Ta=25℃) Item Symbol Rating Reverse voltage VR 5 Chip Size S 10*10 Operating temperature. Topr. -20~+80 Storage temperature. Tstg. -30~+120 Soldering temp. * Tsol. 260 For MAX 5 seconds at the position of 2mm from the package Unit V mm2 ℃ ℃ ℃ Electro-optical characteristics (Typ. Ta=25℃) Item Open circuit voltage Short circuit current Dark current Terminal Capacitance Spectral sensitivity Peak wavelength Symbol VOC ISC Id Ct λ λp Conditions EV=100Lx 2856K VR= -1V V=0V,f=10KHz Min. 400 Typ. 0.3 55 120 20 940 Max. 1100 Unit V μA nA nF nm nm http://www.
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