HYB18TC1G800AF sdram equivalent, 1-gbit ddr2 sdram.
The 1-Gbit Double-data-Rate SDRAM offers the following key features:
* Off-Chip-Driver impedance adjustment (OCD) and On
* 1.8 V ± 0.1 V Power Supply 1.8 V ± 0.1 .
See Table 1 to Table 3 for performance figures. The device is designed to comply with all DDR2 DRAM key features: 1. Po.
CK falling). All I/Os are synchronized with a single ended DQS or differential DQS-DQS pair in a source synchronous fashion. A 17 bit address bus for ×4 and ×8 organised components and a 16 bit address bus for ×16 components is used to convey row, co.
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