HYI18T1G800B Overview
Key Features
- Off-Chip-Driver impedance adjustment (OCD) and On
- 1.8 V ± 0.1 V Power Supply 1.8 V ± 0.1 V (SSTL_18) compatible I/O Die-Termination (ODT) for better signal quality
- DRAM organizations with 4, 8 and 16 data in/outputs
- Auto-Precharge operation for read and write bursts
- Double Data Rate architecture: two data transfers per
