HYS64T32900
Description
The memory array is designed with 512-Mbit Double-DataRate-Two (DDR2) Synchronous DRAMs.
Key Features
- Chip organization 32M × 16 and 64M ×
- Standard Double-Data-Rate-Two Synchronous DRAMs (DDR2 SDRAM) with a single + 1.8 V (± 0.1 V) power supply
- 256MB, 512MB and 1GB modules built with 512-Mbit DDR2 SDRAMs in P-TFBGA-60 and PG-TFBGA-84 chipsize packages
- All speed grades faster than DDR2–400 ply with DDR400 timing specifications
- Programmable CAS Latencies (3, 4, 5 and 6), Burst Length (8 & 4) and Burst Type
- These substances include mercury, lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers
