HYB18H512321BF-10 ram equivalent, 512-mbit gddr3 graphics ram.
* Data mask for write commands
* Single ended READ strobe (RDQS) per byte. RDQS edgealigned with READ data
* Single ended WRITE strobe (WDQS) per byte. WDQS c.
like PC graphics systems. The chip’s 8 bank architecture is optimized for high speed. HYB18H512321BF uses a double data .
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