HYE18L512160BF-7.5 Description
HYB18L512160BF-7.5 HYE18L512160BF-7.5 DRAMs for Mobile Applications 512-Mbit Mobile-RAM RoHS pliant Data S heet Rev. HY[B/E]18L512160BF-7.5 512-Mbit Mobile-RAM HYB18L512160BF-7.5, HYE18L512160BF-7.5 Revision History: 1.22 Page All 51 54 50 Subjects (major changes since last revision) Qimonda update IDD7 change from 20 to 25 Updated the package drawing.
HYE18L512160BF-7.5 Key Features
- Low supply voltages: VDD = 1.70 V to 1.95 V, VDDQ = 1.70 V to 1.95 V Optimized self refresh (IDD6) and standby currents
- A12 A0
HYE18L512160BF-7.5 Applications
- IDD4: change from 60 to 90
- IDD7: change from 40 to 20