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TGA4548-SM Datasheet 10w Gan Power Amplifier

Manufacturer: Qorvo

Overview: TGA4548-SM ® 17 – 20 GHz 10 W GaN Power Amplifier Product Overview Qorvo’s TGA4548-SM is a high frequency, high power MMIC amplifier fabricated on Qorvo’s production 0.15um GaN on SiC process (QGaN15). The TGA4548-SM operates from 17 – 20 GHz and typically provides > 10 W saturated output power with power-added efficiency of 25% and large-signal gain of 18 dB. This bination of high frequency performance provides the flexibility designers are looking for to improve system performance while reducing size and cost. The TGA4548-SM also has an integrated power detector to support system diagnostics and other needs. The TGA4548-SM is offered in a small 5x5.5 mm surface mount package, matched to 50Ω and has integrated DC blocking capacitors on both RF ports allowing for simple system integration. The frequency coverage and operational flexibility allows it support satellite munication as well as point to point data links. The TGA4548-SM is 100% DC and RF tested to ensure pliance to electrical specifications. Lead-free and RoHS pliant. 24-Lead 5.0 x 5.5 x 1.

Datasheet Details

Part number TGA4548-SM
Manufacturer Qorvo
File Size 1.00 MB
Description 10W GaN Power Amplifier
Datasheet TGA4548-SM-Qorvo.pdf

General Description

K-band 10W GaN PA 200 pieces on a 7” reel (standard) Evaluation Board 1 of 17 .qorvo.

TGA4548-SM ® 17 – 20 GHz 10 W GaN Power Amplifier Absolute Maximum Ratings Parameter Rating Drain Voltage (VD) 29.5 V Gate Voltage Range (VG) -8 to 0 V Drain Current Stage 1 (ID1), Top or Bottom 500

Key Features

  • Frequency Range: 17.
  • 20 GHz.
  • PSAT (PIN=22 dBm): 40 dBm.
  • PAE (PIN=22 dBm): 25 %.
  • Small Signal Gain: 30 dB.
  • Integrated Power Detector.
  • Bias: VD1 = VD2 = VD3 = +28 V, ID1 + ID2 + ID3 = 300 mA.
  • Package Dimensions: 5.0 x 5.5 x 1.7 mm Functional Block Diagram Performance is typical across frequency. Please reference electrical specification table and data plots for more details.

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TGA4548-SM Distributor