TGF2023-2-01 - SiC HEMT

Qorvo

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Datasheet Details

Part number	TGF2023-2-01
Manufacturer	Qorvo
File Size	3.42 MB
Description	SiC HEMT
Datasheet	TGF2023-2-01-Qorvo.pdf

TGF2023-2-01 Product details

Description

6 Watt GaN HEMT 1 of 23 www.qorvo.com TGF2023-2-01 ® 6 W, 32 V, DC to 18 GHz, Discrete Power GaN on SiC HEMT Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Drain to Gate Voltage (VDG) 100 V Drain Voltage (VD) Gate Voltage Range (VG) 40 V 7 to 2 V Drain Current (ID) Gate Current (IG) 1.438 A 1.25 to 3.5 mA Power Dissipation, CW (PD) See graph on pg.4. CW Input Power (PIN) Storage Temperature +31 dBm 65 to 150°C Exceeding any

Features

advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2023-2-01 typically provides 37.7 dBm of saturated output power with power gain of 20.7 dB at 3 GHz. The maximum power added efficiency is 71.6 % which makes the TGF2023-2-01 appropriate for high efficiency.

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Published: May 8, 2020 |