Datasheet Details
| Part number | TGF2023-2-20 |
|---|---|
| Manufacturer | Qorvo |
| File Size | 2.43 MB |
| Description | SiC HEMT |
| Datasheet | TGF2023-2-20-Qorvo.pdf |
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Overview: TGF2023-2-20 ® 100 W, 32 V, DC to 14 GHz, Discrete Power GaN on SiC HEMT Product Overview The Qorvo TGF2023-2-20 is a discrete 20 mm GaN on SiC HEMT which operates from DC-14 GHz. The TGF2023-220 is designed using Qorvo’s proven QGaN25 production process.
| Part number | TGF2023-2-20 |
|---|---|
| Manufacturer | Qorvo |
| File Size | 2.43 MB |
| Description | SiC HEMT |
| Datasheet | TGF2023-2-20-Qorvo.pdf |
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100 Watt GaN HEMT 1 of 21 www.qorvo.com TGF2023-2-20 ® 100 W, 32 V, DC to 14 GHz, Discrete Power GaN on SiC HEMT Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Drain to Gate Voltage (VDG) Gate Voltage Range (VG) 100 V −7 to +2 V Drain Current (ID) Gate Current (IG) 20 A −20 to 56 mA Power Dissipation, CW (PD) See graph on pg.4.
CW Input Power (PIN) Storage Temperature +43 dBm −65 to 150°C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device.
Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability.
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
TGF2023-2-20 | 90 Watt Discrete Power GaN on SiC HEMT | TriQuint |
| Part Number | Description |
|---|---|
| TGF2023-2-01 | SiC HEMT |
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