TGF2023-2-20 Datasheet - Qorvo

TGF2023-2-20 SiC HEMT

100 Watt GaN HEMT 1 of 21 www.qorvo.com TGF2023-2-20 ® 100 W, 32 V, DC to 14 GHz, Discrete Power GaN on SiC HEMT Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Drain to Gate Voltage (VDG) Gate Voltage Range (VG) 100 V *7 to +2 V Drain Current (ID) Gate C.

TGF2023-2-20 Features

* advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2023-2-20 typically provides 50.2 dBm of saturated output power with power gain of 14 dB at 6 GHz. The maximum power added efficiency is 65.1% which makes the TGF2023-2-20 appro

TGF2023-2-20-Qorvo.pdf