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TGF2023-2-20 Datasheet - Qorvo

SiC HEMT

TGF2023-2-20 Features

* advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2023-2-20 typically provides 50.2 dBm of saturated output power with power gain of 14 dB at 6 GHz. The maximum power added efficiency is 65.1% which makes the TGF2023-2-20 appro

TGF2023-2-20 General Description

100 Watt GaN HEMT 1 of 21 www.qorvo.com TGF2023-2-20 ® 100 W, 32 V, DC to 14 GHz, Discrete Power GaN on SiC HEMT Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Drain to Gate Voltage (VDG) Gate Voltage Range (VG) 100 V *7 to +2 V Drain Current (ID) Gate C.

TGF2023-2-20 Datasheet (2.43 MB)

Preview of TGF2023-2-20 PDF

Datasheet Details

Part number:

TGF2023-2-20

Manufacturer:

Qorvo

File Size:

2.43 MB

Description:

Sic hemt.
TGF2023-2-20 ® 100 W, 32 V, DC to 14 GHz, Discrete Power GaN on SiC HEMT Product Overview The Qorvo TGF2023-2-20 is a discrete 20 mm GaN on SiC HEMT w.

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TGF2023-2-20 SiC HEMT Qorvo

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