Description
100 Watt GaN HEMT
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TGF2023-2-20
® 100 W, 32 V, DC to 14 GHz, Discrete Power GaN on SiC HEMT
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Rating
Drain to Gate Voltage (VDG) Gate Voltage Range (VG)
100 V
7 to +2 V
Drain Current (ID) Gate C
Features
- advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2023-2-20 typically provides 50.2 dBm of saturated output power with power gain of 14 dB at 6 GHz. The maximum power added efficiency is 65.1% which makes the TGF2023-2-20 appropriate for high efficiency.
TGF2023-2-20 Datasheet
