| Part number | TGF2023-2-20 |
|---|---|
| Datasheet | TGF2023-2-20-Qorvo.pdf |
| File Size | 2.43 MB |
| Manufacturer | Qorvo |
| Description | SiC HEMT |
|
|
100 Watt GaN HEMT 1 of 21 .qorvo. CW Input Power (PIN) Storage Temperature +43 dBm −65 to 150°C Exceeding any one or a bination of the Rating conditions may cause permanent damage to the device. Extended application of Rating conditions to the device may reduce device reliability.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
TGF2023-2-20 | 90 Watt Discrete Power GaN on SiC HEMT | TriQuint |
| Part Number | Description |
|---|---|
| TGF2023-2-01 | SiC HEMT |
| TGF2977-SM | RF Transistor |
