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Marking UF4SC120030K4S
w On-resistance RDS(on): 30mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 277nC w Low body diode VFSD: 1.
w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction h.
The UF4SC120030K4S is a 1200V, 30mW G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive charac.
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