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3CG708 PNP Silicon High Frequency Middle Power Transistor

3CG708 Description

3CG708 PNP Silicon High Frequency Middle Power Transistor .

3CG708 Features

* 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. Make up push pull amplifying circuit wit

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Datasheet Details

Part number
3CG708
Manufacturer
Qunli Electric
File Size
26.46 KB
Datasheet
3CG708-QunliElectric.pdf
Description
PNP Silicon High Frequency Middle Power Transistor

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PNP Silicon High Frequency Middle Power Transistor Qunli Electric
Qunli Electric 3CG708-like datasheet