3CG708 - PNP Silicon High Frequency Middle Power Transistor

Datasheet Summary

Features

1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. Make up push pull amplifying circuit with NPN. 4. Quality Class: GS, G. Implementation of standards: QZJ840611.

Qunli Electric

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Datasheet Details

Part number	3CG708
Manufacturer	Qunli Electric
File Size	26.46 KB
Description	PNP Silicon High Frequency Middle Power Transistor
Datasheet	3CG708 Datasheet
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3CG708 PNP Silicon High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. Make up push pull amplifying circuit with NPN. 4. Quality Class: GS, G. Implementation of standards: QZJ840611 TECHNICAL DATA: Parameter name Symbols Unit Total Dissipation Ptot mW Max.

Published: Dec 24, 2016 |