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RCA

2N3600 Datasheet Preview

2N3600 Datasheet

RF Power Transistors

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File No. 83 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
ffilrnLJD
Solid State
Division
RF Power Transistors
2N918
2N3600
RCA-2N918 and RCA-2N3600 are double-diffused
epitaxial planar transistors of the silicon n-p-n type.
They are extremely useful in low-noise-amplifier, oscil-
lator, and converter applications at VHF frequencies.
These devices utilize a hermetically sealed four-
lead JEDEC TO-72 package. All active elements of
the transistor are insulated from the case, which may
be grounded by means of the fourth lead in applications
requiring minimum feedback capacitance, shielding of
the device, or both.
MAXIMUM RATINGS, Absolute-Maximum Values:
2N918 2N3600
COLLECTOR-TD-BASE
VOLTAGE, VCSO' . . . . . . . . . .. 30
30 mnx. V
COLLECTOR-1'D-EMITTER
VOLTAGE, VCEO' .......... .
15
15 max. V
EMITTER-TD-SASE
VOLTAGE.VESO··········· .
COLLECTOR CURRENT, Ic .....
50
max. V
max. rnA
TRANSISTOR DISSIPATION, P T:
For operation with heat sink:
At case
'
{
up
to
250 C
.
.
.
.
temperatures** above 25°C ...
For operation at ambient
temperatures:
At ambient
UP to 25°C . . . .
{
temperatures above 25°C .. .
300 300 max. mW
Derate at 1.71 mW/oC
200 200 max. mW
Derate at 1.14 mW/oC
TEMPERATURE RANGE:
Storage and Operating (Junction). .. -65 to +200
°c
LEAD TEMPERATURE
(During Soldering):
At distances.?=. 1116 inch from
seating surface for 60 seconds
max.. . . . . . . . . . . . . . . . . . .. 300
* Limited by transistor di!:lsipution.
** Measured at center of seating surface.
300 max. °c
SILICON N-P-N
EPITAXIAL PLANAR
TRANSISTORS
For VHF Applications
In Military, Communications,
and Industrial Equipment
FEATURES
• high gain.bandwidth product
• hermetically sealed four· lead package
o low leakage current
• high 200·MHz power gain
2N3600
• low noise figure
=NF 4.5 dB max. at 200 MHz
• low collector~to~base time constant
rb'Cc = 15 ps max.
• high power gain as neutralized amplifier
Gpe = 17 dB min. at 200 MHz
COMMON-EMITTER CIRCUIT, BASE INPUTi
OUTPUT SHORT-CIRCUITED.
15
FREQUENCY (f) ., 100 MHz
COLLECTOR-TO-EMITTER VOLTS (VCE). 6
AMBIENT TEMPERATURE (T A ):: 25° C
JEDEC
TO·72
10 15 20 25 30
COLLECTOR MILLIAMPERES (Icl
92CS-12845RI
Fig. I - Small-signal beta characteristic for types 2N918
and 2N3600.
10.66
33




RCA

2N3600 Datasheet Preview

2N3600 Datasheet

RF Power Transistors

No Preview Available !

2N918, 2N3600 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 83
ELECTRICAL CHARACTERISTICS
.TEST CONDITIONS
LIMITS
Characteristics
Symbols
Ambient
Temperature
Frequency
DC
Collector-
to· Base
DC
Collector·
tn-Emitter
DC
Emitter
Current
DC
Collector
Current
DC
Base
Current
Voltage Voltage
Type
2N918
Type
2N3600
Units
TA I VCB VCE IE IC IB
°c MHz V V rnA rnA rnA Min. Typ. Max. Min. Typ. Max.
Collector-Cutoll Current
ICBO
25
150
15 0
15 0
0.01 0.01 iJA
1 1 iJA
Collector·to-Base
Breakdown Voltage
BVCBO
25
0 0.001
30
30
V
Colledor-to-Emitter
Sustaining Voltage
BVCEO(SUS) 25
3 0 15
15
V
Emitter-tn-Base
Breakdown Voltage
BVEBO
25
0.01 0
3
3
V
Collector-to-Emitter
Saturation Voltage
VCE(sat)
25
\0 1
0.4 0.4 V
Base-to-Emitter
Saturation Voltage
VBE(sat)
25
10 1
1 1V
static Forward Current-
Transfer Ratio
Small-Signal Forward
Current-Transfer Ratio"
hFE
hfe
25
100
25 100
1kHz
1
3 20
20 150
\0 4 6
-
65
8.5 15
62
40 200
Common-Base Oulput
Capacitanceb
Cob
25 0.1 to 1 \0
0
0
0
1.7 pF
3 pF
Collector-tn-Base
Feedback Capacitanceb
Ccb
25 O_lto 1 10
0
1 pF
Common-Base Input
Capacitance' (VEa =O.5V)
Cib
25 O.lto 1
0 2 1.4 pF
Collector-to-Base
Time Constant"
rb'Cc
25
40
31.9
6
6
2 15
ps
5 4 15 ps
Small-Signal Power Gain
in Neutralized Common-
Emitter Amplifier CircuitG
(See Fig_2 & Fig.!)
Gpe
25 200
12 6 15 21
dB
65
17 24 dB
Small-Signal Power Gain
in Unneutralized Common-
Emitter Amplifier Circuit"
(See Fig.4)
Gpe
25 200
10 5
13
dB
Power Output in Common-
Emiller Oscillator Cir-
cuit" (See Fig.5)
Po
25
~500
10
12
30 20 mW
rlose Figure" (See Fig_2)
NF
25 200
6 1.5
4_5 dB
Noise Figure",d
NF 25 60
61
6 3 dB
a Lead No.4 (case) grounded.
b Three-Iermina) measuremenl of Ihe colleclor-Io-base capacilance
wilh Ihe case. and em tiler teads connecled 10 the guard lerminal.
c Lead No.4 (case) ftoating.
d Generalor Resislance (Rg) =400 ohms.
34


Part Number 2N3600
Description RF Power Transistors
Maker RCA
PDF Download

2N3600 Datasheet PDF






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