File No. 766 _________________________________
Silicon N-P-N Transistors
With Integral Heat Radiator
For High·Speed Switching and
a Maximum-area-of-operation curves for de and pulse operation
a Rated for safe operation in both forward- and reverse-bias conditions
" High sustaining voltage
a Total saturated transition time less than 1 p.s
for 2N3879, 2N5202, and 2N6500
RCA-2N3878, 2N3879, 2N5202, and 2N6500o are epitaxial
silicon n-p-n transistors. The 2N3878 is an amplifier type
intended for audio-, ultrasonic-, and radio-frequency circuits.
Types 2N3879, 2N5202, and 2N6500 are switching transistors
intended for use in high-current, high-speed switching circuits.
Type 40375 is a 2N3878 with a factory-attached heat radiator;
it is intended for printed circuit-board applications.
Typical applications for these transistors include: low-distor-
tion power amplifiers, oscillators, switching regulators, series
regulators, converters, and inverters.
• Formerly RCA Dev. Type Nos. TA2509, TA2509A, TA7285, and
MAXIMUM RATlNGS,Absolute-Maximum Values:
COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE:
With external base-to-emitter resistance (RBE) == 50 n.
With base open.
'CONTINUOUS COLLECTOR CURRENT
PEAK COLLECTOR CURRENT.
'CONTINUOUS BASE CURRENT.
At case temperature (TC) '" 25°C
At case temperatures above 25°C
At ambient temperature (TAl = 25°C
For other conditions .
Storage & operating (Junction)
1/32 in. (0.8 mml from seating plane for 10 s max.
2N3879 2N5202 2N65DD
120 100 120
65 90 75' 110*
Derate linearly at 0.2 W/oC
See Figs. 5, 6, 7, and 8
- -65 to 200
235 235 235 235
* In accordance with JEDEC registration data format JS-6 RDF-2 (2N3878); JS-6 RDF·' (2N3879, 2N5202, 2N65001.