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RCA

 2N5491 Datasheet Preview

# 2N5491 Datasheet

### Power Transistors

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File No. 353 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
O\lm5LJO
Solid State
Division
Power Transistors
2NS490 2NS491
2NS492 2NS493
2NS494 2NS49S
2NS496 2NS497
~ 2N5491. 2N5493
2N5495. 2N5497
\ For TO-68 ·Sockets
JEDEC TO-220AA
'
2N5490.2N6492
2N5494. 2N5496
::::"..
.~~
JEDEC TO·220AB
Hometaxial-Base, Silicon N-P-N
VERSAWATT Transistors
General-Purpose Types for Medium-Power Switching and
Amplifier Applications in Military, Industrial, and Commercial
Equipment
FEATURES
• Low saturation voltage-
VeE(sat) = 1 V max. at Ie = 2 A (2N5490, 2N5491)
= 1 V max. at Ie = 2.5 A (2N5492, 2N5493)
= 1 V max. at Ie = 3 A (2N5494, 2N5495)
= 1 V max. at Ie = 3.5 A (2N5496, 2N5497)
• VERSAWATT package (molded silicone plastic)
o Maximum safe-area-of..operation curves specified for DC and pul se operation
RCA-2N5490, 2N5491, 2N5492, 2N5493, 2N5494,
2N5495, 2N5496 and 2N5497* are hometaxial-base silicon
n-p-n transistors. They are intended for a wide variety
of medium-power switching and amplifier applications,
such as series and shunt regulators and driver and out-
put stages of high·fidelity amplifiers.
Types 2N5491, 2N5493, 2N5495, and 2N5497 have
formed emitter and base leads for insertion into TO-66
sockets. Types 2N5490, 2N5492, 2N5494, and 2N5496
are electrically identicalto the 2N5491, 2N5493, 2N5495,
and 2N5497 but have straight leads.
These new plastic power transistors differ in volt-
age ratings and in the currents at which the parameters
are controlled.
* Formerly RCA Dev. Nos. TA7317. TA7318. TA7315. TA7316.
TA7313. TA7314. TA731l. TA7312. respectively.
;s also available.
sentative. or write to RCA Low·Frequency Power Marketing,
Somerville, N. J. 08876.
Maximum Ratings, Absolute-Maximum Values:
2NS490
2NS491
2NS494
2NS49S
2NS492
2NS493
2NS496
2NS497
COLLECTOR-TO-BASE VOLTAGE ......... .
COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE:
VCBO
60 75 90 V
With -1.5 volts (YaE ) of reverse bias . . . . . . . . . . . . . . . . . . . . . . . . YCEY(sus) 60 75 90 V
With external base-to-emitter resistance (RBE) = lOOn . . . . . . . . . . . • VCER(~us) 50 65 80 V
With base open . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCEO(sus) 40 55 70 V
EMITTER-TO-BASE VOLTAGE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VEBO
5 5 5V
COLLECTOR CURRENT ................................. .
77
A
BASE CURRENT . . . . . . . . . . . . . . . . . . . . . . . • . . . . . . . . . . . . . . .
3A
TRANSISTOR DISSIPATION: . . . . . . . . . . . . . . . _ .............. .
At case temperatures up to 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . .
50 50 50 W
At ambient temperatures up to 25°C ........................ .
1.8 1.8 1.8 W
At case temperatures above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . Derate linearly at 0.4 W/oC or see Figs. 2 & ·3.
At ambient temperatures above 25°C ..............•..........
TEMPERATURE RANGE:
Storage & Operating (Junction) ...........................•
Atdistance.?: 118 in. (3.17 mm) fromc8seforlOs max . . . . . . . . . . . . ,.
-- Derate linearly at 0.0144 W/oC
-65 to 150 _
°c
235
12·73
225

RCA

 2N5491 Datasheet Preview

# 2N5491 Datasheet

### Power Transistors

 No Preview Available !
2N5490-2N5497 ~_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 353
dELECTRICAL CHARACTERISTICS. Case Temperature (T = 2f1'C Unless Otherwise Specified
Characteristic
Symbol
TEST CONDITIONS
DC
Voltage
(V)
Types
DC 2N5496
Current (A) 2N5497
LIMITS
Types
2N5494
2N5495
Types
2N5492
2N5493
Types
2N5490 Units
2N5491
VCE VBE IC IB Min. Max. Min. Max. Min. Max. Min. Max.
Collector-Cutoff Current
With base-emitter junction
reverse biased
ICEV
ICEV
(TC = 150oC)
Collector-Cutoff Current
With external base-to:emitter
resistance (RBE) = lOOn
Emitter-Cutoff Current
ICER
ICER
(TC = 1500C)
lEBO
DC Forward-Current Transfer Ratio hFEc
Collector-to-Emitter Sustaining
Voltage:
With base open
With external base-to-emitter
nresistance (R BE) =100
VCEO(SUS)c
VCER(suS)c
85 -1..5
55 -1.5
70 -1.5
85 -1.5
55 -1.5
70 -1.5
70
40
55
70
40
55
-5
4 3.5
43
4 2.5
42
1
5
0.5
3.5
1
20 100
20
1
5
0.5
3.5
1
100
20
1
5
0.5
3.5
1
100
20
2
5
1
100
0.1 0 70 40 55 40
0.1 80 50 65 50
With base-emitter junction
reverse biased
VCEV(SUS)c
-1.5 0.1
90 60 75
60
Base-to-Emitter Voltage
VBEC
4
4
4
4
Collector-to-Emitter
saturation Voltage
VCE(sat)c
Gain-Bandwidth Product
Sat. SWitching Time:
Turn-On (See Figs.l5 and 17)
fT 4
ton VCC = 30
Turn-Off (See Figs.15 and 17)
toll VCC = 30
3.5 1.7
3 1.5
2.5 1.3
2 1.1
3.5 0.35
1
3 0.3
1
2.5 0.25
1
2 0.2
1
0.5 0.8
3.5 0.35°
3 0.3°
2.5 0.25°
2 0.2
0.8
5
0.8
-
5
0.8
5
5
3.5 0.3t
15
3 0.3
15
2.5 0.25b
15
2 0.2
15
rnA
rnA
rnA
rnA
rnA
V
V
V
V
V
MHz
!,-s
!,-s
226

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