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2N5805 - Power Transistors

Download the 2N5805 datasheet PDF (2N5804 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power transistors.

Features

  • JEDEC TO-3 . . Power dissipation (PT) = 110 W at SO V.
  • High-voltage ratings: VCEO(sus) = 300 V max. (2NS80S) = 22S V max: (2NS804) a Maximum-operating-area curves. . for selection of maximum operating conditions for operation free from second breakdown. RCA types 2NSB04 and 2NSB05.
  • are silicon n-p-n transistors with high breakdown-voltage ratings and fast switching speeds. Both devices employ the popular TO-3 package; they differ in breakdown-voltage ratings and leakage-currp.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N5804-RCA.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N5805
Manufacturer RCA
File Size 327.19 KB
Description Power Transistors
Datasheet download datasheet 2N5805 Datasheet

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Full PDF Text Transcription

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File 1'10. 407 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ OO(]5LJD Solid State Division Power Transistors 2N5804 2N5805 High-voltage, High~.Power Silicon N-P-N Power Transistors For Switching and Amplifier Applications Features: JEDEC TO-3 .. Power dissipation (PT) = 110 W at SO V • High-voltage ratings: VCEO(sus) = 300 V max. (2NS80S) = 22S V max: (2NS804) a Maximum-operating-area curves. .for selection of maximum operating conditions for operation free from second breakdown. RCA types 2NSB04 and 2NSB05** are silicon n-p-n transistors with high breakdown-voltage ratings and fast switching speeds. Both devices employ the popular TO-3 package; they differ in breakdown-voltage ratings and leakage-currpnt values.
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