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RCA

2N6513 Datasheet Preview

2N6513 Datasheet

Power Transistor

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File No.. 848 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
[ID(J8LJD
Solid State
Division
Power Transistors
2N6510-2N6514
High-Voltage, High-Current
Silicon N-P-N
Power-Switching Transistors
For Switching Applications in Industrial
Commercial and Military Equipment
JEDEC TO-3
H-1570
Features:
a Fast switching speed
1:::1 Epitaxial pi-nu construction
" Hermetic steel package-JEDEC TO-3
a Maximum.safe-area-of-operation curves
a Thermal-cycling rating chart
The RCA-2N6510. -2N6511, -2N6512, -2N6513, and -2N6514°
are epitaxial silicon n-p-n power transistors with pi-nu con-
struction. They are especially designed for use in electronic
ignition circuits and other applications requiring high-voltage,
high-energy, and fast-switching-speed capability.
These devices are hermetically sealed in a steel JEDEC TO-3
package. They differ from each other in breakdown-voltage
ratings, leakage, and beta characteristics.
°Formerly RCA Dev. Nos. TA8847D. TA8847A, TA8847B, TA8847C.
and TA8847E. respectively.
TERMINAL CONNECTIONS
Pin 1 - Base
Pin 2 - Emitter
Case - Collector
Mounting Flange - Collector
MAXIMUM RATINGS, Absolute-Maximum Values:
'COLLECTOR-TO-BASE VOLTAGE ............................ V CBO
COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE,
With external base-to-emitter resistance RBE '" SO n. ............ VCER(sus)
With base open ........ ................................ . VCEO(sus)
'EMITTER-TO-BASE VOLTAGE............................... VEBO
'CONTINUOUS COLLECTOR CURRENT........................ IC
*CONTINUOUS BASE CURRENT .............................. IS
'EMITTER CURRENT. . . . . ... .... . . . . . . . . . . . . . . . . . . . .. . . . .... IE
'TRANSISTOR DISSIPATION,
PT
At case temperatures up to 2SoC .......................... .
At case temperatures above 2SoC .......... ............ .
'TEMPERATURE RANGE,
Storage and Operating (Junction) .... ...................... .
*PIN TEMPERATURE (During Soldering):
>=At distances 1/32 in. (0.8 mm) from seating plane for 10 s max.
*In accordance with JEDEC registration data format JC-25 RDF-1.
2N6510 2N6511 2N6512 2N6513 2N6514
250 300 350 400 350 V
250 300 350 400 350 V
200 250 300 350 300 V
6 6V
7 7A
33
3A
10 10 10 10 10 A
120 120 120 120
_ _ _ _ See Figs. 1 and 2.
120 W
-65 to +200
230
°c
°C·
9-74 385




RCA

2N6513 Datasheet Preview

2N6513 Datasheet

Power Transistor

No Preview Available !

2N6510-2N6514 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No_ 848
ELECTRICAL CHARACTERISTICS, Case Temperature (TC) = 2!PC Unless Otherwise Specified
CHARACTERISTIC
Collector-Cutoff Current:
With base open
With base·emitter
junction reverse biased
With base-emitter
junction reverse biased,
TC= 1000 C
Emitter-Cutoff Current
Collector-ta-Emitter
Sustaining Voltage:
With base open
With external base-to-
emitter resistance:
RBE = 50n
SYMBOL
ICEO
ICEV
lEBO
TEST CONDITIONS
VOLTAGE CURRENT
Vdc
Adc
VCE VBE IC IB
150
200
250 -1.5
300 -1.5
250 -1.5
300 -1.5
LIMITS
2N6510
2N6511
Min_ Typ. Max. Min. Typ.
- -5 - -
- -- - -
- -5 - -
- -- - -
- - 10 - -
- -- - -
UNITS
Max.
-
5
rnA
-
5
rnA
-
10
-6 - - 3 - - 3 rnA
VCEO(sus)
VCER(sus)
-0.2 200b - - 250b
-
V
-0.2 250b
- 300b - -
Emitter-ta-Base Voltage:
IE=3mA
DC Forward-Current
Transfer Ratio
Base-to-Emitter
Saturation Voltage
Collector-to-Emitter
Saturation Voltage
VEBO
hFE
VBE(sat)
3
3
VCE(sat)
3a
4a
3a 0.6
4a 0.8
3a 0.6
4a 0.8
7a 3
6
10
-
-
-
-
-
-
--
- 50
--
- 1.7
--
- 1.5
--
1.5 2.5
6
-
10
-
-
--
-
--
--
- 50
--
- 1.7
--
- 1.5
1.5 2.5
V
V
V
Output Capacitance:
VCB = 10 V, f = 1 MHz
Cobo
100 - 200 100 - 200 pF
Magnitude of Common
Emitter, Small-Signal
Short·Circuit, Forward-
Current Transfer Ratio:
f= 1 MHz
I Ihfe 10
1
3 - 9 3 - 9 MHz
Forward-Bias, Second-
Breakdown Collector
Current:
t = 1 s, nonrepetitive
38
ISlb 200
3.16 - - 3.16 -
0.1· - - 0.1
-
-
-
A
Switching Time:c
(VCC = 200 V, IBl = IB2):
Delay Time
Rise Time
Storage Time
Fall Time
~
t,
ts
tf
3 0.6
4 O.B
3 0.6
4 O.B
3 0.6
4 O.B
3 0.6
4 O.B
-
-
-
-
-
-
-
-
0.1 0.2
--
0.7 1.5
--
35
--
0.5 1.5
--
-
-
-
-
-
-
-
-
--
0.1 0.2
--
0.7 1.5
--
35
--
0.5· 1.5
/.ts
• Thermal Resistance:
Junction-to-Case
ROJC
20
• Minimum and maximum values and tast conditions
In accordance with JEDEC registration data format JC·25 RDF-1.
a Pulsed; purse'~ur8tion =300 ",5, duty factor ~ 2%.
386
5
-- - 1.46
- 1.46 oCIW
b CAUTION: The sustaining voltages VCEO{sus) and VCER(sus)
MUST NOT be measured on a curve tracer. These sustaining
voltages should be measured by means of the test circuit shown
in Fig. 11.
c See Figs. 8-10.


Part Number 2N6513
Description Power Transistor
Maker RCA
Total Page 6 Pages
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