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40391 Datasheet Preview

40391 Datasheet

Power Transistors

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_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 216
OOcrBLJD
Solid State
Division
Power Transistors
2N4036 2N4037 2N4314
40391 40394
+. R .
i"'" , .• ~
40394
H-1375
j~-'J~
_, vr---\>.o
40391
H-1468
~
2N4036
2N4037
2N4314
JEOEC
TO-39
H-1381
Medium-Power Silicon
P-N-P Planar Transistors
General·Purpose Types for
Industrial and Commercial Applications
Features:
• 2N4036} are p-n-p complements of {2N2102A&
2N4037
2N3053
• Gain-bandwidth product tfT) =60 MHz min
• High breakdown voltages
• Maximum-area-of-operation curves
• Planar construction provides low
noise and low leakage
• Low saturation voltages
• High pulsed beta at high collector current
These devices are available with either 1%-
inch leads (TO-6 package) or %·inch leads
(TO-39 package). Tbelonger..Jaad versions are
specified by suffix "L" after the type num-
ber; the shorter·lead versions are specified by
suffix "s" after the type number.
• Fast switching (ZN4036)
The 2N4036, 2N4037, 2N4314", 40391, and 40394 are
double-diffused, epitaxial-planar, silicon p-n-p transistors; they
differ in breakdown-voltage ratings, leakage-current, and sat-
uration characteristics. The 40391 is a 2N4037 with a factory·
attached heat radiator, intended for printed-circuit-board appli-
cations. Type 40394 is a 2N4037 with a factory-attached
diamond-shaped mounting flange.
These transistors are intended for a wide variety of small-
signal medium-power applications. With a minimum gain-
bandwidth product (fTl of 60 MHz, these devices provide use-
ful gain at high frequencies. In addition, the 2N4036 is
useful in high-speed saturated switching applications.
... Formerly Dev, Nos. TA2651. TA2670. and TA2670A,
respectively.
.....2N2102 is a linear-beta type; the 2N3053 is a general-purpose type.
For technical bulletins for these types, write to RCA Solid State
Division. Box 3200, Somerville. N. J. 08876.
MAXIMUM RATINGS, Absolute Maximum Values:
• COLLECTOR-TO·BASE VOLTAGE ......... .
COLLECTOR-TO·EMITTER SUSTAINING VOLTAGE:
V CBO
2N4036
-90
2N4037
40391,40394
- 60
With 1.5 volts IVBE I of reverse bias ., .. ,
VCEV(,u,1
With external base·ta-emitter resistance (R BE , :5.200 n ...... . VCERI,u,)
... With base open .. , .... , ............. ,.,", ........ , .. VCEOlsus)
• EMITTER-TO·BASE VOLTAGE ... .
V EBO
• COLLECTOR CURRENT ...
IC
• BASE CURRENT ...... .
IB
• TRANSISTOR DISSIPATION: ..
PT
At case temperatures up to 25°C .... ,', ..... ,' ... , ..... .
At free-air temperatures up to 25°C
At temperatures above 250 C .............. , , ........ .
For pulsed operation. , ......................... .
-85
-85
-65
-7
-1.0
-0.5
-60
-60
-40
-7
-1.0
- 0.5
7(2N40371
7(403941
3.5(40391)
1!2N4037,403941
See Figs. 6 and 7
See Fig. 1
• TEMPERATURE RANGE:
Storage & Operating (Junction) ............. .
.. LEAD TEMPERATURE (During soldering):
-65 to 200
At distance2 1/16in. (1.58 mm)
from seating plane for 10 s max.
230
... In accordance with JEDEC registration data format IJS-6 RDF-' 2N4036; JS-g RDF-2 2N4037, 2N4314).
2N4314
-90
-85
-85
-65
-7
-1.0
-0.5
V
V
V
V
V
A
A
w
w
w
w
162
7-73




RCA

40391 Datasheet Preview

40391 Datasheet

Power Transistors

No Preview Available !

File No. 216.
2N4036,2N4037,2N4314,40391,40394
ELECTRICAL CHARACTERISTICS, at Case Temperature (TcJ = 2!PC unless otherwise specified
CHARACTERISTIC
SYMBOL
Collector Cutoff Current:
With emitter open
leBO
With base open
With base-emitter junction
reverse biased
TC"'150oC
ICED
ICEX
'Emiller Cutoff Current
lEBO
TEST CONDITIONS
VOLTAGE
Vdc
CUR-
RENT
mAde
VeB
- 90
-60
VeE
- 30
V BE
'e
-85
3D
1.5
1.5
LIMITS
2N4036
Min.
Max.
- 0.1·
-0,02
- 0.5-
2N4037
40391
40394
Min. Max.
- 0.25-
- 5-
2N4314
Min.
Max.
- 0.25-
-5·
UNITS
mA
,A
,A
100·
0.1·
- 0.1·
- 0.02
- ,.
-1·
mA
mA
,A
Collectpr-lo-Base
Breakdown Voltage (IE :: 0)
V(BRICBO
Emmer-ta-Base Breakdown Voltage
liE'" -OJmAI
V(BAIEBO
-0.1
- 90
-7
- 60·
-7
-900
-7
V
V
Collector-ta-Emltter
Sustaintnl=! Voltage:
(See Figs, 2 and 3)
With base-emitter lunctton
reverse biased
With external base-to-
. emitter reSistance
(ReEI:S. 200 1!
With base open
VCEVlsus)
VCER(susl
VCEO(susl
1.5
- 100
_ 858
- 100
- 100
_ 85i1
_ 65<1
_ 60a
_ 50"
_ 40a
• Collector-la-Emitter
=Voltage (Ie -15 rnA)
Base-to-Emiller Voltage
VCE(sat)
V BE
-10
- 150
-150
- 0 65
- 11
-1.4
- 1.5-
=- Base·lo·Emltter
Voltage (Ie -15 rnA)
VsE(sall
- 150
-'4
- DC Forward·Current
Transfer Rat.o
hFE
-2
-'0
- 10
-10
-10
- 150
20 200
- 0.1
20
- 1.0
_ 150b 40 140
_ 500b
20
15
50 250
Common·Emltter. Small-S.gn..JI.
Short·Clrcult, Forward-Current
Transfer Rat.o (at f = 20 MHI)
""
-10
-50
3D
3.0
- Magnitude of Common-Em.tter.
Small,Slgnal, Short-C.rcult,
Forward-Current Transfer Raila
(at f " 20 MHz)
1",,1
Co(lector-Base Capacitance
lat f '" I MHz, IE =01
Cob
Input Capacitance
C,b
- Sat. SWitching Time· C
(See Figs. 70 and l1J
Rise time
Storage time
Fallt.me
Turn·on time
Turn-off time
,,,
"
'on
toll
-10
- 50
-10
0.5
3.0
3D
90
3.0 10
30·
90
- 30
-30
-30
- 30
- 30
- 150
- 150
-150
-150
- 150
70
600
100
110
700
Thermal ReSistance:
Junctlon-to-Case
ROJC
25· 25 (max.)
2N4037 &
40394
Junction-to-Ambient
R'JJA
165 165 {mad
2N4037 &
40394
50 (max.)
40391
a CAUTION. The sustaonong voltage; VCEO (susl. VCEAlsusl. al1d V~EV.(susl MUST NOT be measu,red all a curve tracer
These sustall10ng vollilges should )e meaSlorerj by meal1S 01 the test CirCUit shown on F.g 2.
<b Pulsed; pulse duration 300 jJ S, duty factor 2%.
.In accordance with JEOEC registration data lor mat (JS GRDF 1 2N4036; JS-g ROF 2 2N4037,2N43141
C1CI B1 = 'B2 = 15 rnA
_853
_ 85iJ
_ G5iJ
-1.4
- 1.5-
V
V
V
V
V
V
15
50 250
3.0
3.0 10
30· pF
90 pF
25 °C/W
165 °C/W
°C/W
163


Part Number 40391
Description Power Transistors
Maker RCA
Total Page 6 Pages
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