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40392 Datasheet Preview

40392 Datasheet

Power Transistors

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_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 432
CRlm500
Solid State
Division
Power Transistors
2N3053
40389 40392
'~~......;~;.~.~.R.C..
II'
40392
H-1375
H-1468
tiTeIl
2N3053S
II \
2N3053L
II \
H-1380
General-Purpose, Medium-Power
Silicon N-P-N Planar Transistors
For Small-Signal Applications
In Industrial and Commercial Equipment
Features:
III Maximum safe~area-of-operation
curve
• Forward- and reverse-bias operation
without second breakdown
• low leakage current
These devices are available with either 1~·
inch leads (TO-5 package) or %-inch leads
ITO-39 package). The longer-lead versions are
specified by suffix "L" after the type num-
ber; the shorter-lead versions are specified by
suffix "S" after the type number.
RCA·2N3053 is a silicon n-p-n planar transistor useful up
to 20 MHz in small-signal, medium-power applications. Type
40389 is a 2N3053 with a factory-attached diamond-shaped
mounting flange.
Applications:
• Audio amplifiers
• Controlled amplifiers
• Power supplies
• Power oscillators
MAXIMUM RATINGS, Absolute-Maximum Values:
COLLECTOR-TO-BASE VOLTAGE
COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE:
With external base-ta-emitter resistance
(RBE) = 10n . . . . .
With base open. . . . . . . .
With base-emitter-junction reverse-biased
EMITTER-TO-BASE VOLTAGE
COLLECTOR CURRENT. . .
TRANSISTOR DISSIPATION:
At case temperatures up to 25°C
. VCBO
VCER(SUS)
VCEQ(sus)
VCEV(sus)
VEBO
IC
PT
At free-air temperatures up to 250C.
At temperatures above 250C .
TEMPERATURE RANGE:
Storage and operating (Junction)
LEAD TEMPERATURE (During soldering):
At distance;;;' 1/32 in. (0.8 mm) from
seating plane for lOs max. . . . . .
2N3053
60
40389
40392
60
50 50
40 40
60 60
55
0.7 0.7
57
(40392)
3.5
(40389)
See Figs.1, 2, and 3
.. -65 to +200 ..
-235---
V
v
V
V
V
A
W
W
80 9-73




RCA

40392 Datasheet Preview

40392 Datasheet

Power Transistors

No Preview Available !

File No. 432 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N3053, 40389, 40392
ciELECTRICAL CHARACTERISTICS, At Case Temperature (T =2t;OC
Characteristics
Collector-Cutoff Current
Emittt"r-Cutoff Current
DC Forward-Current
Transfer Ratio
Collector-to-Base
Breakdown Voltage
Emittcr-to... Base
Breakdown Voltage'
Symbol
ICBO
lEBO
hn:
BV C I l O
TEST CONDITIONS
DC
Collector
Voltage
V
DC
Emitter
or Base
Voltage
V
Vce VCE VEa VaE
DC
Current
mA
IC IE la
30 0
40
LIMITS
Types
2N3053
40389
40392
Units
Min. Max.
- 0.2S fJ-A
- 0.25 fJ-A
10 ISOa SO 250
0.1 0
60 -
\"
IlV EBO
0 0.1
-.';
\'
Collector-to-Emi tter
Sustaining Voltage:
With base open
With external base-Io-emitter
rpsislance
(RRE) = 10 \l
Base-la-Emitter
Saluration Voltage'
ColleCt or-to-f:mitter
Saturation Vo1tagc
VCEO(Sus)
VCER(sUS)
V B~~(Hat)
VCE(sat)
100"
100·
1·.50
150
0 40 -
\'
so - \
IS -
1.7 \'
15 -
1.4 \'
Small-Signal, Forward Curren t
TransfN Ratio (At 20 MHz)
hfe
Output Capacitance
Input Capacitance
Thermal Resistance!
Junction-to-Case
Cob
Cib
8J-C
10
10
O.S
Junction-to-Free Air
8J - FA
apulsed; pulse duration = 300J.l.S' duty factor = 1.8 %.
SO
0
0
S-
- IS pF
80 pF
35(max.) °elw
2N3053
25(max.) °CIW
40392
175(max.) °CIW
2N3053
50(max.) °CIW
40389
81


Part Number 40392
Description Power Transistors
Maker RCA
Total Page 5 Pages
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