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40886 Datasheet Preview

40886 Datasheet

Power Transistors

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_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 508
ffilCffiLlD
Solid State
Division
Power Transistors
2N6175 40885
2N6176 40886
2N6177 40887
2N6175 High-Voltage, Medium- Power
2N6176
2N6177
Silicon N-P-NTransistors
"Plastic TO-S"'
For High-Speed Switching and Linear-Amplifier Applications
40885
40886
40887
With Heat Chip
Features
• Thermal fatigue ratings
• High frequency response: fT = 20 MHz
• Maximum area-of-operation curves for DC and pulse operation
• Designed to assure freedom from second breakdown in class A, B,
and C operation at maximum ratings
RCA types 2N6175, 2N6176, and 2N6177* are silicon
n·p·n transistors with high breakdown voltages, high fre·
quency response, and fast switching speeds. Types 40885,
40886, and 40887 are electrically identical to the 2N6175-
2N6177, respectively, but are supplied with factory·attached
heat clips.
Typical applications for these devices include TV video
output, RGB output, chroma output, TV blanking, solenoid
drivers, off·line inverters, regulators, audio output, and
electrostatic deflection in display circuits.
*Formerly Dev. Nos. TA7739. TA7740and TA7134. respectively.
• High voltage ratings:
VCEO(SUS) = 350 V max. (2N6177, 40887)
= 300 V max. (2N6176, 40886)
= 250 V max. (2N6175, 40885)
• Low saturation voltage:
VCE(sat) = 0.5 V max.
TERMINAL CONNECTIONS
Lead 1 - Emitter
Lead 2 - Base
Lead 3 - Collector
MAXIMUM RATINGS, Absolute·Maximum Values:
·COLLECTOR·TO·BASE VOLTAGE . . . . . . . . . . . . . . . . . . . . . . . . VCBO
"COLLECTOR·TO·EMITTER SUSTAINING VOLTAGE . . . . . . . . . . . . IICEO(su,1
"EMITTER-TO·BASE VOLTAGE .............•............ VE80
"COLLECTOR CURRENT ..... .
"BASE CURRENT ....••.....
"TRANSISTOR DISSIPATION ....
At case temperatures up to 2SoC ..
· ... IC
· ... Ie
· •.. PT
At case temperatures above 2SoC ..
At ambient temperatures up to 25°C
At ambient temperatures above 25°C
For pulse operation . . . . . . . . .
"TEMPERATURE RANGE:
Storage & Operating (Junction) . . . . . . . . . . . . . .
"LEAD TEMPERATURE (During soldering):
At distance ,!1/16 in. (1.59 mm) from case for 10 s max.
2N6175
40885
300
250
6
1.0
0.5
2N6176
40886
350
300
6
1.0
0.5
2N6177
40887
450
350
6
1.0
0.5
V
V
V
A
A
20 20
20
(2N6175, 2N6176, 2N6177)
See Fig. 14
O.B O.B
0.8
(2N6175, 2N6176, 2N6177)
lA lA
lA
140885.40886.40887)
See Fig. 15
See Figs. 1,4, and 7
W
w
w
- . a ; to 135----_
......- - - 2 3 0 - - - - _ . , .
-Types 2N6175. 2N6176. and 2N6177 in accordance with JEDEC registration data format JS·g RDF-8.
304
9-74




RCA

40886 Datasheet Preview

40886 Datasheet

Power Transistors

No Preview Available !

File No. 508 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N6175-2N6177, 40885-40887
cJELECTRICAL CHARACTERISTICS, At Case Temperature (T = 2!f1C
TEST CONDITIONS
LIMITS
CHARACTERISTIC
Collector-Cutoff Current:
. With base open
With emitter open
With base-emitter
junction reverie-
biased. VBE = -1.5 V
Emitter-Cutoff Current.
VBE = -6 V
DC Forward·Current Transfer
RatIO
COllector-ta-Emi tter
Sustaining Voltage:
WIth base open
Base-ta-Emltter
SaturatIon Voltage
COllector-ta-Emitter
Saturation Voltage
SYMBOL
ICED
ICBO
ICEV
VOLTAGE
V de
CUR·
RENT
rnA de
2N6175
40885
2N6176
40886
2N6177
40887
UNITS
VCB
360
280
240
VCE
300
200
IC
IB MIN. MAX.
0-
-
0-
50
--
--
- 50
MIN.
-
-
.-
-
-
MAX.
-
50
-
50
-
MIN.
-
-
-
-
-
MAX.
20
-
20
-
-
JJA
450 - - - - - 500
300
- 500 - 500 -
-
lEBO
hFE
0
10 50a
10 20a
10 5a
10 l a
- 20
-
30' 190
--
15 -
- 20
30' 150
15 -
--
- 20
30' 150
--
15 -
--
JJA
VCEOIsusl
VBEIsatl
VCEIsati
50" 0 250b -
50~ 4 -
1.3
300b -
- 1.3
350b -
- 1.3
.50a 4 -
0.5 -
0.5 -
0.5
V
V
V
Collector-ta-Base
Breakdown Voltage
Low-Frequency. Common-
Emitter. Small-Signal.
Short,ClrcUlt, Forward-
Gurrent Transfer RatIO
I: 1 kHz
VIBRICBO
hIe
l a 300 350 450
V
10 5
25 -
25 -
25 -
Magnitude of Common-
Emitter, Small·Signal,
Short·Circuit, Forward-
Current Transfer Ratio
1= 3 MHz
Real Part o.)f Common-
Emitter, Small-Signal,
Short~Circuit Input
Impedance:
1=1 MHz
Output Capacitance:
f = 1 MHz
Second-Breakdown
Collector Current:
With base forward biased,
t = 0.4 s nonrepetitive
Ihlel
20 20
Relhtel
Ccb
20 20
10 5
20
IS/bb
150
7-
7-
7-
-
-
300 - - -
- - 300 -
-n
300
-8
-8
-B
pF
133 -
133 -
133 -
rnA
Thermal ReSistance:
Junctlon-to-Case
Junctlon-ta-Amblent
RO JC
RO JA
- 5.5
12N61751
- 1 138
I12N61751
- 78.6
1408851
- 5.5
12N61761
- .! 138
I12N61761
- 78.6
1408B61
- 5.5
12N61771
- ..t 138
12N61771
I- 78.6
1408871
• Types 2N6175. 2N6176. and 2N6177 In accordance with JEDEC registration data format JS-9 RDF·8.
a Pulsed Pulse duration = 300 jlS; duty factor:::; 2%.
bCAUTIClN: The sustaining votlage VCEO(sus) MUST NOT be measured on a curve tracer. The
sustaining voltage should be measured by means of the test circuit shown in Fig. 10
°C/W
305


Part Number 40886
Description Power Transistors
Maker RCA
Total Page 6 Pages
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