RCR1514ESH - N-Channel Enhancement Mode Field Effect Transistor
RCR
Key Features
Low On-Resistance
Pin Configurations
①:G.
Fast Switching Speed
②:S.
Low-voltage drive.
Easily designed drive circuits.
ESD Protected
③:D
Package Information
Absolute Maximum Ratings @TA=25℃ unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
YKKJPD-V3.1
Ratings 60
±20
Unit V V
1 /4
Drain Current (Continuous)
TA=25°C
Drain Current (Pulse)
Power Dissipation
TA=25°C
Operating Temperature/ Storage Temperature.
Full PDF Text Transcription for RCR1514ESH (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
RCR1514ESH. For precise diagrams, and layout, please refer to the original PDF.
urations ①:G ·Fast Switching Speed ②:S ·Low-voltage drive ·Easily designed drive circuits ·ESD Protected ③:D Package Information Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS YKKJPD-V3.1 Ratings 60 ±20 Unit V V 1 /4 Drain Current (Continuous) TA=25°C Drain Current (Pulse) Power Dissipation TA=25°C Operating Temperature/ Storage Temperature *1 Pw ≦10 μs, Duty cycle ≦1 % *2 When mounted on a 1*0.75*0.
RCR1514ESH Datasheet
