Datasheet Details
| Part number | RCR1540ESJ |
|---|---|
| Manufacturer | RCR |
| File Size | 694.66 KB |
| Description | P-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
 RCR1540ESJ Datasheet
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| Part number | RCR1540ESJ |
|---|---|
| Manufacturer | RCR |
| File Size | 694.66 KB |
| Description | P-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
RCR1540ESJ Datasheet
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The RCR1540ESJ uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.
This device is suitable for use as a load switch or in PWM applications.
z Package Information z Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Sy mbol VDS VGS Ratings -20 ±8 Unit V V Drain-Source Voltage Gate-Source Voltage 1/5 YKKJPD-V3.1 http://www.Datasheet4U.com ® RCR15 Drain Current (Continuous) Drain Current (Pulse) Power Dissipation TA=25°C TA=25°C TA=70°C ID IDM PD TJ//TSTG -4 -3.2 -30 1.4 -55~150 40ESJ A A W ℃ Operating Temperature/ Storage Temperature z Electrical Characteristics @TA=25℃ unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit ON/OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current V(BR)DSS IDSS VGS(th) IGSS VGS = 0V, ID= -250μA VDS = -16 V , VGS = 0V VGS =VDS , IDS=-250μA -20 --0.3 ----8 --- ----0.65 -50 59 74 16 -0.81 --1 -1 ±10 55 63 83 --1.0 -2.2 V μA V μA mΩ mΩ mΩ S V A VGS=±8V , VDS=0V VGS = -4.5V , ID= -4A VGS = -2.5V , ID= -4A VGS = -1.8V , ID= -2A Drain-Source On-state Resistance RDS(on) Forward Transconductance Diode Forward Voltage Maximum Body-Diode Continuous Current gFS VSD IS VDS= -5V , ID= -4A ISD= -1A , VGS= 0V Switching CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Qg Qgs Qgd td ( on ) tr td( off ) tf VDS = -10V, ID = -4A VGS = -4.5V ---- 2.51 ----- 3452 4.59 2.14 5.97 2.78 3.26 nC nC nC ns ns ns ns VDD = -10V, RL=2.5Ω ID = -4A, VGEN = -4.5V RG = 3Ω 965.2 1604 7716 1930.4 3208 15432 6904
® RCR15 P-Channel Enhancement Mode Field Effect Transistor z.
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