BF491 - PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE VIDEO TRANSISTORS
RECTRON
General Description
SYMBOL
Collector-Emitter Voltage
VCEO
Collector Base Voltage
VCBO
Emitter Base Voltage
VEBO
Collector Current Continuous
Total Device Dissipation @ Ta=25ºC Derate Above 25ºC
IC PD
Total Device Dissipation @ Tc=25ºC Derate Above 25ºC
PD
Operating And Storage Junction Temperature Range
Tj
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BF491. For precise diagrams, and layout, please refer to the original PDF.
PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE VIDEO TRANSISTORS High Voltage Video Amplifier Darlington Transistor * Power Dissipation: PD=625mW BF491 THRU BF493 .205(5.20) ....
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Transistor * Power Dissipation: PD=625mW BF491 THRU BF493 .205(5.20) .175(4.45) .082(2.082) .078(1.982) 321 .022(0.55) .016(0.41) .210(5.33) .170(4.32) TO-92 .50(12.7MIN.) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specified. Absolute Maximum Ratings T A=25 OC unless otherwise noted DESCRIPTION SYMBOL Collector-Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous Total Device Dissipation @ Ta=25ºC Derate Above 25ºC IC PD Total Device Dissipation @ Tc=25ºC Derate Above 25ºC PD Operating And Storage Junction Temperatu
BF491 Datasheet
