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RFW2140-10 - Power Amplifier

Description

The power amplifier module is designed for base stations and cell extenders and operating frequency range is from 300MHz to 2.3GHz GaAs HFET is used and attached on a copper sub carrier.

It is connected by using bias and in/out matching circuit method with gold wire bonding.

Features

  • Small size by using simple matching circuit board.
  • Single Supply Voltage.
  • Heat sink 99.9% copper, gold plated.
  • High Productivity.
  • Low Manufacturing Cost.
  • GaAs HFET RFW2140-10.

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Datasheet preview – RFW2140-10

Datasheet Details

Part number RFW2140-10
Manufacturer RFHIC
File Size 172.44 KB
Description Power Amplifier
Datasheet download datasheet RFW2140-10 Datasheet
Additional preview pages of the RFW2140-10 datasheet.

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Full PDF Text Transcription

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Power Amplifier Product Features • Small size by using simple matching circuit board • Single Supply Voltage • Heat sink 99.9% copper, gold plated • High Productivity • Low Manufacturing Cost • GaAs HFET RFW2140-10 Application • UMTS Repeater • RF Sub-Systems • Base Station www.DataSheet4U.com Package : DP-56 Description The power amplifier module is designed for base stations and cell extenders and operating frequency range is from 300MHz to 2.3GHz GaAs HFET is used and attached on a copper sub carrier. It is connected by using bias and in/out matching circuit method with gold wire bonding.
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