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RTP18080-20 - GaN Power Amp Pallet

General Description

The RTP18080-20 is designed for RF system application frequencies from 1805 ~ 1880MHz, with high gain.

This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, and high efficiency.

The RTP18080-20 is a DPD application amplifier.

Key Features

  • Doherty amplifier design.
  • GaN on SiC HEMT.
  • Small and light weight.
  • 50 Ohm Input/Output impedance matched.
  • Highly reliable and rugged design.
  • High efficiency.
  • 80W typical PAVG RTP18080-20.

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Datasheet Details

Part number RTP18080-20
Manufacturer RFHIC
File Size 606.17 KB
Description GaN Power Amp Pallet
Datasheet download datasheet RTP18080-20 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GaN Power Amp Pallet Product Features • Doherty amplifier design • GaN on SiC HEMT • Small and light weight • 50 Ohm Input/Output impedance matched • Highly reliable and rugged design • High efficiency • 80W typical PAVG RTP18080-20 Applications • LTE DPD amplifier • General purpose RF amplifier Description The RTP18080-20 is designed for RF system application frequencies from 1805 ~ 1880MHz, with high gain. This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, and high efficiency. The RTP18080-20 is a DPD application amplifier. Electrical Specifications @ VDD= 48V, 50Ω System PARAMETER Frequency Range Operating Bandwidth Average Output Power UNIT MHz MHz dBm MIN 1805 48.