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RTP21070-20 - GaN-SiC Pallet Amplifier

General Description

The RTP21070-20 is designed for RF system application frequencies from 2110MHz to 2170MHz, with high gain.

This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, high efficiency.

The RTP21070-20 is DPD application amplifier.

Key Features

  • Doherty amplifier design.
  • GaN on SiC HEMT.
  • Small and light weight.
  • 50 Ohm Input/Output impedance matched.
  • Highly reliable and rugged design.
  • High efficiency, High Gain.
  • 70W typical PAVG.

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Datasheet Details

Part number RTP21070-20
Manufacturer RFHIC
File Size 401.93 KB
Description GaN-SiC Pallet Amplifier
Datasheet download datasheet RTP21070-20 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary GaN-SiC Pallet Amplifier RTP21070-20 Product Features • Doherty amplifier design • GaN on SiC HEMT • Small and light weight • 50 Ohm Input/Output impedance matched • Highly reliable and rugged design • High efficiency, High Gain • 70W typical PAVG Application • LTE, WCDMA DPD amplifier • General purpose RF amplifier Description The RTP21070-20 is designed for RF system application frequencies from 2110MHz to 2170MHz, with high gain. This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, high efficiency. The RTP21070-20 is DPD application amplifier. Electrical Specifications @ VDD=+48VDC, T=25°C, 50Ω System PARAMETER Symbol Min Typ Frequency Range BW 2110 - Output Power Instantaneous Bandwidth PAVG SBW - 48.