RTP21070-20 Key Features
- Doherty amplifier design
- GaN on SiC HEMT
- Small and light weight
- 50 Ohm Input/Output impedance matched
- Highly reliable and rugged design
- High efficiency, High Gain
- 70W typical PAVG
- LTE, WCDMA DPD amplifier
- General purpose RF amplifier
- Output Power Instantaneous Bandwidth