Datasheet4U Logo Datasheet4U.com

RTP21080-20 - GaN Power Amp Pallet

General Description

The RTP21080-20 is designed for RF system application frequencies from 2110 ~ 2170MHz, with high gain.

This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, and high efficiency.

The RTP21080-20 is a DPD application amplifier.

Key Features

  • Doherty amplifier design.
  • GaN on SiC HEMT.
  • Small and light weight.
  • 50 Ohm Input/Output impedance matched.
  • Highly reliable and rugged design.
  • High efficiency.
  • 80W typical PAVG RTP21080-20.

📥 Download Datasheet

Datasheet Details

Part number RTP21080-20
Manufacturer RFHIC
File Size 583.96 KB
Description GaN Power Amp Pallet
Datasheet download datasheet RTP21080-20 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GaN Power Amp Pallet Product Features • Doherty amplifier design • GaN on SiC HEMT • Small and light weight • 50 Ohm Input/Output impedance matched • Highly reliable and rugged design • High efficiency • 80W typical PAVG RTP21080-20 Applications • WCDMA & LTE DPD amplifier • General purpose RF amplifier Description The RTP21080-20 is designed for RF system application frequencies from 2110 ~ 2170MHz, with high gain. This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, and high efficiency. The RTP21080-20 is a DPD application amplifier. Electrical Specifications @ VDD= 48V, 50Ω System PARAMETER Frequency Range Operating Bandwidth Average Output Power UNIT MHz MHz dBm MIN 2110 48.5 TYP 60 49.