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FPD6836P70 Datasheet, RFMD

FPD6836P70 Datasheet, RFMD

FPD6836P70

datasheet Download (Size : 415.76KB)

FPD6836P70 Datasheet

FPD6836P70 phemt equivalent, low-noise high-frequency packaged phemt.

FPD6836P70

datasheet Download (Size : 415.76KB)

FPD6836P70 Datasheet

Features and benefits


* 22dBm Output Power (P1dB)
* 15dB Gain at 5.8GHz
* 0.8dB Noise Figure at 5.8 GHz
* 32dB Output IP3 at 5.8GHz
* 45% Power-Added Efficiency at 5.8GHz <.

Application

Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT 9 GaAs pHEMT Si CMOS.

Description

The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT) optimised for low-noise, high-frequency applications. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP.

Image gallery

FPD6836P70 Page 1 FPD6836P70 Page 2 FPD6836P70 Page 3

TAGS

FPD6836P70
LOW-NOISE
HIGH-FREQUENCY
PACKAGED
pHEMT
RFMD

Manufacturer


RFMD

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