The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT) optimised for low-noise, high-frequency applications.
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FPD6836P70 Low-Noise High-Frequency Packaged pHEMT FPD6836P70 LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT Package: P70 Product Description The FPD6836P70 is a low parasitic, ...
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T Package: P70 Product Description The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT) optimised for low-noise, high-frequency applications. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT 9 GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS Features 22dBm Output Power (P1dB) 15dB Gain at 5.8GHz 0.8dB Noise Figure at 5.8 GHz 32dB Output IP3 at 5.8GHz 45% Power-Added Efficiency at 5.8GHz Usable Gain to 18GHz Applications Gain blocks and medium power stages WiMax (2GHz to 1
FPD6836P70 Datasheet
