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FPD6836P70 Datasheet - RFMD

FPD6836P70 LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT

The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT) optimised for low-noise, high-frequency applications. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT 9 GaAs pHEMT S.

FPD6836P70 Features

* 22dBm Output Power (P1dB)

* 15dB Gain at 5.8GHz

* 0.8dB Noise Figure at 5.8 GHz

* 32dB Output IP3 at 5.8GHz

* 45% Power-Added Efficiency at 5.8GHz

* Usable Gain to 18GHz Applications

* Gain blocks and medium power stages

* WiMax (2GHz

FPD6836P70-RFMD.pdf