FPD6836P70 phemt equivalent, low-noise high-frequency packaged phemt.
* 22dBm Output Power (P1dB)
* 15dB Gain at 5.8GHz
* 0.8dB Noise Figure at
5.8 GHz
* 32dB Output IP3 at 5.8GHz
* 45% Power-Added Efficiency
at 5.8GHz <.
Optimum Technology Matching® Applied
GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT
9 GaAs pHEMT
Si CMOS.
The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT) optimised for low-noise, high-frequency applications.
Optimum Technology Matching® Applied
GaAs HBT GaAs MESFET InGaP.
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