RFHA1025 Datasheet 280W GaN WIDEBAND PULSED POWER AMPLIFIER

Manufacturer: RF Micro Devices (now Qorvo)

RFHA1025 280w gan wideband pulsed power amplifier by RF Micro Devices (now Qorvo) - Datasheet Preview

Datasheet Details

Part number	RFHA1025
Manufacturer	RF Micro Devices (now Qorvo)
File Size	939.76 KB
Description	280W GaN WIDEBAND PULSED POWER AMPLIFIER
Download	RFHA1025 Download (PDF)

General Description

The RFHA1025 is a 50V 280W high power discrete amplifier designed for L-band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications.

Using an advanced high power density gallium nitride (GaN) semiconductor process, these high performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single package.

The RFHA1025 is a matched power transistor packaged in a hermetic, flanged ceramic package.

Overview

RFHA1025 280W GaN Wideband Pulsed Power Amplifier RFHA1025 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic,.

Key Features

Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Supports Multiple Pulse Conditions 10% to 20% Duty Cycle 100s to 1ms Pulse Width Integrated Matching Components for High Terminal Impedances.
RF IN VG Pin 1 (CUT ) RF OUT T VD Pin 2 G GND B BASE.
50V Operation Typical Performance.
Functional Block Diagram.
Output Pulsed Power 280W Pulse Width 100S, Duty Cycle 10%.

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