* Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Supports Multiple Pulse Conditions 10% to 20% Duty Cycle 100s t.

Using an advanced high power density gallium nitride (GaN) semiconductor process, these high performance amplifiers ach.

The RFHA1025 is a 50V 280W high power discrete amplifier designed for L-band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high power density gallium nitride (GaN) semicondu.

RFHA1020

RFHA1023

RFHA1000

RFHA1003

RFHA1006

RFH10N45

RFH10N50

RFH12N35

RFH12N40

RFH25P08

RFH25P10

RFH45N05

RFH45N06