RFPA3809
RFPA3809 is GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER manufactured by RF Micro Devices.
Features
- High Linearity: OIP3=49d Bm (880 MHz)
- Low Noise: NF=3.1d B (2140 MHz)
- P1d B>29d Bm
- 400MHz to 2700MHz Operation
- Thermally Enhanced Slug
Package
Applications
- Ga As Pre-Driver for Base Station Amplifiers
- PA Stage for mercial Wireless Infrastructure
- Class AB Operation for DCS, PCS, UMTS, LTE, and WLAN Transceiver Applications
- 2nd/3rd Stage LNA for Wireless Infrastructure
Functional Block Diagram
Product Description
The RFPA3809 is a Ga As HBT linear power amplifier specifically designed for Wireless Infrastructure applications. Using a highly reliable Ga As HBT fabrication process, this high performance single-stage amplifier achieves ultra-high linearity over a broad frequency range. It also offers low noise figure making it an excellent solution for 2nd and 3rd stage LNAs. The RFPA3809 also exhibits excellent thermal performance through the use of a thermally-enhanced plastic surface-mount slug package.
DS130130
Ordering Information
RFPA3809SQ
Sample Bag with 25 pieces
RFPA3809SR
7" Reel with 100 pieces
RFPA3809TR13 13" Reel with 2500 pieces
RFPA3809PCK-410 869MHz to 894MHz PCBA with 5-piece Sample Bag
RFPA3809PCK-411 2110MHz to 2170MHz PCBA with 5-piece Sample Bag
Optimum Technology Matching® Applied
- Ga As HBT
Si Ge Bi CMOS
Ga As p HEMT
Ga N HEMT
Ga As MESFET
Si Bi CMOS
Si CMOS
Bi FET HBT
In Ga P HBT
Si Ge HBT
Si BJT
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, Power Star®, POLARIS™ TOTAL RADIO™ and Ultimate Blue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421
- For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.....