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SGA-2286Z - CASCADABLE SiGe HBT MMIC AMPLIFIER

Download the SGA-2286Z datasheet PDF. This datasheet also covers the SGA-2286 variant, as both devices belong to the same cascadable sige hbt mmic amplifier family and are provided as variant models within a single manufacturer datasheet.

Description

The SGA-2286 is a high performance SiGe HBT MMIC Amplifier.

A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance.

The heterojunction increases breakdown voltage and minimizes leakage current between junctions.

Features

  • High Gain: 14dB at 1950MHz.
  • Cascadable 50Ω.
  • Operates from Single Supply.
  • Low Thermal Resistance Package Gain (dB) Return Loss (dB) Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS 9 SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Gain & Return Loss vs. Freq. @TL=+25°C 24 18 GAIN 12 IRL ORL 6 0 0 1 2 3 4 Frequency (GHz) 0 -10 -20 -30 -40 5.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SGA-2286-RFMD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SGA-2286Z
Manufacturer RFMD
File Size 347.99 KB
Description CASCADABLE SiGe HBT MMIC AMPLIFIER
Datasheet download datasheet SGA-2286Z Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SGA-2286(Z) DC to 5000 MHz, Cascadable SiGe HBT MMIC Amplifier SGA-2286(Z) DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-86 Product Description The SGA-2286 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.
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