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SZP-5026Z Datasheet 4.9ghz To 5.9ghz 2w Ingap Amplifier

Manufacturer: RF Micro Devices (now Qorvo)

Overview: SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier Preliminary SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFMD Green, RoHS pliant, Pb-Free Package: Proprietary SOF-26 ..

General Description

RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor (HBT) power amplifier.

It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal bination of low cost and high reliability.

This product is specifically designed for use as a driver or final stage power amp for 802.16 equipment in the 4.9GHz to 5.9GHz bands.

Key Features

  • an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable and thermally enhanced surface-mount SOF-26 package. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET Vcc Features.
  • P1dB =33dBm @ 5V 802.11a 54Mb/s Class AB Performance POUT =25dBm @ 2.5% EVM, 5.9GHz, 5V, 680mA On-Chip Input Power Detector Internally Prematched Input and Output Proprietary Low Thermal Resistance Package Power Up/Down Control.

More Datasheets from RF Micro Devices (now Qorvo)

Part Number Description

SZP-5026Z Distributor