SZP-5026Z Datasheet - RFMD

SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER

RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor (HBT) power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use.

SZP-5026Z Features

* an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable and thermally enhanced surface-mount SOF-26 package. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET Vcc Features

* P1dB =33dBm @ 5V 802.11a 54Mb/s Class A

SZP-5026Z_RFMD.pdf