Datasheet Details
| Part number | SZP-5026Z |
|---|---|
| Manufacturer | RFMD |
| File Size | 439.23 KB |
| Description | 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER |
| Datasheet |
 SZP-5026Z Datasheet
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Description
RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor (HBT) power amplifier.
It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.
Features
- an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable and thermally enhanced surface-mount SOF-26 package. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET Vcc Features.
- P1dB =33dBm @ 5V 802.11a 54Mb/s Class AB Performance POUT =25dBm @ 2.5% EVM, 5.9GHz, 5V, 680mA On-Chip Input Power Detector Internally Prematched Input and Output Proprietary Low Thermal Resistance Package Power Up/Down Control.